EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS
Keywords:
: impurities, profiles, influence, thermal annealing, implanted atoms, thin layers, depth, radiation doses.
Abstract
The paper reports results of the study of the distribution profiles of implanted iron and cobalt atoms in silicon as a function of the radiation dose and annealing temperature that was performed by applying the Rutherford backscattering spectroscopy (RBS). The effects of thermal annealing on the distribution of iron, cobalt, and in particular oxygen were studied. The authors strongly suggest that under certain heat treatment conditions and by applying specific radiation doses, the so-called epitaxial silicides will build on the surface of a single crystal, which can play the role of conducting or metal layers. One could consider the RBS method for analysis of both the topological distribution of dopants and the interaction of impurities.
References
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2. Эгамбердиев Б.Э. , Холлиев Б.Ч., Маллаев А. С., Зоирова М. Э., Эшонхонов А. “Получение пленок CoSi2/Si (100) и анализ их морфологии и стехиометрии методами молекулярно-лучевой,твердофазной и реактивнойэпитаксии” ЭОМ, Молдова, 2007, №1, С.88-92.
3. К. Sakamoto, Т. Maeda, and М. Hasegawa. Growth of epitaxial CoSi2 for contacts of ultra-thin SOI MOSFETs //Thin Solid Films. - 369. - 2000. - C.240-243.
4. Эгамбердиев Б.Э. , Маллаев А. С. Кремниевые силицидные структуры на основе ионного легирования. Т.: изд. «Наука и технология» 2019г. 168с.
5. Egamberdiev B.E., Holliev B.Ch., Mallaev A.S., Zoirova M.E., Eshonkhonov A., Preparation of CoSi2/Si (100) films and analysis of their morphology and stoichiometry by molecular beam, solid-state and reactive epitaxy // EOM, Moldova, 2007, No. 1, P.88-92.
6. B.E. Egamberdiev, A.T. Rakhmanov, A.S. Mallaev, A.A Rashidov The electron-spectroscopic Investigations of the epitaxial CoSi2 films on silicon // International Journal of Advanced Research in Science, Engineering and Technology 2018, vol.5, Issue 1.p.5050-5053.
7. K. Raian, L.M. Hsiung, J.R. Jimenez, L.J. Schowaller, K.V. Ramanathan, R.D. Thompson, S.S. Iyer. Microstructural stability of epitaxial CoSi2/Si(001) interfaces. // J. Appl. Phys. 1991. V. 70. No. 9. P. 4853 - 4856.
8. Rangelov G., Augustin P., Stober J., Th. Fauster. Initial stages of epitaxial CoSi2 formation on Si(100) surfaces. // Phys. Rev. B. 1994. V. 49. No. P. 7535-7542.
9. Karpenko O.P., Yalisove S.M. CoSi2 heteroepitaxy on patterned Si(100) substrates. // J. Appl. Phys. 1996. V. 80. No. 11. P. 6211 - 6218.
10. Ikegami H., Ikeda H., Zaima S., Yasuda Y.. Thermal stability of ultra¬thin CoSi2 films on Si(100)-2xl surfaces. // Appl. Surf. Sci. 1997. V. 117/118. P. 275 - 279.
11. R.T. Tung. A novel technique for ultrathin CoSi2 layers: oxide mediated epitaxy. // Jpn. J. Appl. Phys. 1997. V. 36. Part 1, No. 3b. P. 1650 - 1654.
Published
2024-03-29
How to Cite
Амин МАЛЛАЕВ, Бахром ЭГАМБЕРДИЕВ, & Шохрух САЙФУЛЛОЕВ,. (2024). EFFECT OF ANNEALING ON THE CRYSTAL STRUCTURE OF THE SURFACE OF SILICON DOPED WITH COBALT IONS. News of the NUUz, 3(3.1), 492-497. https://doi.org/10.69617/uzmu.v3i3.1.1918
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